Abstract :
The aim of this paper is to report the realization of a silicon field effect transistor for power applications, using a process in which high energy ion implantation technique is coupled with the planar technology. This device, called "Gridistor", a multi-channel field effect transistor having a p-type buried layer as gate, presents certain advantages for power generation and amplification at several gigahertz. Our purpose is to realize devices with the following characteristics: 1 watt at 3 gigahertz in a class A amplifier with 6 db power gain.
