DocumentCode
3553584
Title
Instantaneous temperature profiles inside silicon power devices
Author
Marek, A. ; Aecklin, J.A. ; Cornu, J.
Author_Institution
Brown Boveri Research Center, Switzerland
Volume
18
fYear
1972
fDate
1972
Firstpage
140
Lastpage
140
Abstract
Infrared microscopy as a means for observing dynamic thermal processes inside a slice out from a silicon power device has been reported by Burtsev et. al. and refined by Jaecklin and Marek. Since the local emissivity depends on doping, instantaneous free carrier concentration and the optics used, interpretation of these radiation measurements is extremely difficult. In the existing literature it has been based on homogeneous emissivity throughout the sample.
Keywords
Current distribution; Electric breakdown; Electronic ballasts; Protection; Resistors; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1972 International
Type
conf
DOI
10.1109/IEDM.1972.249359
Filename
1477182
Link To Document