• DocumentCode
    3553602
  • Title

    A single-transverse-mode GaAs laser device

  • Author

    Philipp-Rutz, Elisabeth M.

  • Author_Institution
    IBM Corporation, Gaithersburg, Md.
  • Volume
    18
  • fYear
    1972
  • fDate
    1972
  • Firstpage
    160
  • Lastpage
    160
  • Abstract
    A high radiance GaAs laser operating at room temperature, has been developed under contract to the National Aeronautics and Space Administration for use in an optical space navigation system. To achieve high radiance a single, 300 microns wide, GaAs diode is confined to the lowest-order transverse mode. This is accomplished by operating the laser diode with its mirror faces anti-reflection coated in an optical cavity in which the transverse mode is controlled by an aperture limiting slit. The asymmetry and small size of the active region and the very low impedance of the GaAs laser diode presented serious problems in designing a rugged and efficient device.
  • Keywords
    Apertures; Contracts; Diode lasers; Gallium arsenide; Impedance; Laser modes; Mirrors; Navigation; Optical control; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1972 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1972.249376
  • Filename
    1477199