• DocumentCode
    3553642
  • Title

    "Junction field effect transistor with the lower gate formed by a 3.5 MeV boron ion implantation"

  • Author

    Colman, D. ; Stephen, Jose

  • Volume
    18
  • fYear
    1972
  • fDate
    1972
  • Firstpage
    5
  • Lastpage
    6
  • Keywords
    Boron; Displays; Electric variables; Epitaxial layers; FETs; Impurities; Ion implantation; Leakage current; Microwave devices; Microwave transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1972 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1972.249232
  • Filename
    1477234
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553642