Role of Auger recombination in the photodarkening process of semiconductor-doped glasses

Author

Vanhaudenarde-Peoc´h, A. ; Moussu, C. ; Zaquine, I. ; Frey, R.

Author_Institution

Dept. Images, Ecole Nat. Superieure des Telecommun., Paris, France

fYear

1996

fDate

7-7 June 1996

Firstpage

21

Abstract

Summary from only given. In this paper we show that the photodarkening effect arises when Auger recombination takes place in the nanocrystallites. The experimental study is performed through time-resolved measurements of the diffraction efficiency of gratings encoded in the semiconductor doped glasses (SCDG) by the interference of two nanosecond duration laser pulses.

Keywords

Auger effect; diffraction gratings; electron-hole recombination; high-speed optical techniques; measurement by laser beam; nanostructured materials; optical glass; photochromism; semiconductor doped glasses; semiconductor doping; time resolved spectra; Auger recombination; diffraction efficiency; gratings; nanocrystallites; nanosecond duration laser pulse interference; photodarkening effect; photodarkening process; semiconductor doped glasses; semiconductor-doped glasses; time-resolved measurements; Absorption; Conducting materials; Crystallization; Diffraction; Electron traps; Glass; Optimized production technology; Photochromism; Radiative recombination; Refractive index;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865516