DocumentCode
3553714
Title
Charge storage junction field-effect transistor
Author
Arai, M.
Author_Institution
Sony Corporation Research Center, Yokohama, Japan
Volume
19
fYear
1973
fDate
1973
Firstpage
72
Lastpage
74
Abstract
A new floating-gate junction FET has been developed for various applications as a light-sensor, an analog memory and a time-delay unit. This device is integrable in conventional bipolar ICs and is useful in time-related circuits which otherwise require large capacitors.
Keywords
Analog memory; Capacitors; Circuits; FETs; Leakage current; Lighting; Nonvolatile memory; Sensor phenomena and characterization; Temperature dependence; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188651
Filename
1477528
Link To Document