DocumentCode
3553719
Title
Hg.8 Cd.2 Te (PC)detectors under high optical flux densities
Author
Bartoli, F. ; Allen, R. ; Esterowitz, L. ; Kruer, M.
Author_Institution
Naval Research Laboratory, Washington, D. C.
Volume
19
fYear
1973
fDate
1973
Firstpage
89
Lastpage
91
Abstract
The performance of n-type Hg0.8 Cd0.2 Te (PC) detectors under high optical flux densities was investigated. Detector photoconductivity and response time were measured, in the presence of 10.6 µm laser radiation. Flux densities, Φ, were varied over four orders of magnitude up to a maximum level of 
photons/cm2-sec (i.e approximately 40 w/cm2). For high flux levels the photoconductivity varies as the cube root of the incident flux and the detector response time varies as 
. It is concluded that the observed saturation in photoconductivity is due to the decrease in carrier lifetime with carrier concentration. The dominant recombination mechanism at high flux levels was determined to be Auger recombination. Evidence is found that at low flux levels other recombination processes may also be important.
photons/cm2-sec (i.e approximately 40 w/cm2). For high flux levels the photoconductivity varies as the cube root of the incident flux and the detector response time varies as . It is concluded that the observed saturation in photoconductivity is due to the decrease in carrier lifetime with carrier concentration. The dominant recombination mechanism at high flux levels was determined to be Auger recombination. Evidence is found that at low flux levels other recombination processes may also be important.Keywords
Charge carrier lifetime; Delay; Detectors; Mercury (metals); Optical pulses; Optical saturation; Photoconductivity; Pulse measurements; Radiative recombination; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188655
Filename
1477532
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