DocumentCode
3553724
Title
New semiconductor devices of ultra-high breakdown voltage
Author
Matsushita, Teruo ; Hayashi, H. ; Yagi, H.
Author_Institution
Sony Corporation, Atsugi, Kanagawa, Japan
Volume
19
fYear
1973
fDate
1973
Firstpage
109
Lastpage
110
Keywords
Breakdown voltage; Conductivity; Electric breakdown; Semiconductor devices; Size control; Space charge; Substrates; Switches; Thyristors; Yagi-Uda antennas;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188660
Filename
1477537
Link To Document