DocumentCode
3553729
Title
Design and performance of two-phase charge-coupled devices with overlapping polysilicon and aluminum gates
Author
Kosonocky, W.F. ; Carnes, J.E. ; Kosonocky, W.F. ; Carnes, J.E.
Author_Institution
RCA Laboratories, Princeton, New Jersey
Volume
19
fYear
1973
fDate
1973
Firstpage
123
Lastpage
125
Abstract
The design, fabrication, operation, performance and analysis of two-phase surface channel, CCD shift registers built using a polysilicon overlapped by aluminum gate technology will be presented. The devices studied consist of previously described 64 and 128-stage shift registers with 1.2 mil center-to-center spacing and a new 500 stage device with 0.8 mil center-to-center spacing, including various channel widths of 5.0, 1.0 and 0.5 mil. Devices were fabricated on a variety of different substrates including
Keywords
Aluminum; Charge coupled devices; Charge transfer; Clocks; Doping; Frequency; Silicon; Solids; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188664
Filename
1477541
Link To Document