• DocumentCode
    355378
  • Title

    Visible light emitting diode technology: high performance, more colors, and moving into incandescent lamp applications

  • Author

    Craford, M. George

  • Author_Institution
    Hewlett-Packard Ltd., USA
  • fYear
    1996
  • fDate
    7-7 June 1996
  • Firstpage
    28
  • Abstract
    Summary form only given. In recent years visible LEDs have experienced a revolutionary increase in performance. Improvements of about 10X in the red and green spectral regions and about 50X in the amber and blue regions have been demonstrated and are becoming available commercially in high volume. This is enabling visible LEDs, which had been a pervasive technology in low performance "indicator" applications, to move into applications previously dominated by incandescent lamps and other lighting technologies, and to enable new applications. External quantum efficiencies in excess of 20% at 673 nm and luminous performance as high as 50 lumens/watt at 607 nm have been achieved using AlInGaP epitaxial structures grown by MOCVD and utilizing wafer bonding. Incandescent lamps typically have a performance of 15 lumens/watt for white light, and substantially lower performance when filtered to give colors. AlInGaN LEDs with about 18 lumens/watt and 6% quantum efficiency in the green at 525 nn and 2 lumens/watt and 9% quantum efficiency have been demonstrated in the blue at 450 nm. A pulsed nitride laser at 410 nm has also been reported. This talk focuses on the status and trends in high-performance visible LED technology. Issues discussed will include: How much additional performance is plausible? What applications are emerging and might be expected to emerge in the future? How effectively might LEDs ultimately compete with other types of white light sources? and, what role might solid-state lasers have in the emerging visible markets?.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; semiconductor lasers; solid lasers; 410 nm; 450 nm; 525 nm; 607 nm; 673 nm; AlInGaN; AlInGaP; AlInGaP epitaxial structures; MOCVD; amber; blue; green; high performance; incandescent lamp applications; quantum efficiencies; r; solid-state lasers; visible LEDs; visible light emitting diode technology; wafer bonding; Light emitting diodes; Light sources; Solid lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
  • Conference_Location
    Anaheim, CA, USA
  • Print_ISBN
    1-55752-444-0
  • Type

    conf

  • Filename
    865527