• DocumentCode
    3553809
  • Title

    Characteristics of high performance microwave transistors fabricated by ion implantation

  • Author

    Sigmon, T.W.

  • Author_Institution
    Hewlett Packard Laboratories, Palo Alto, California
  • Volume
    19
  • fYear
    1973
  • fDate
    1973
  • Firstpage
    387
  • Lastpage
    389
  • Abstract
    In this paper the characteristics and fabrication of implanted microwave transistors are discussed. By use of arsenic implanted emitter and boron implanted base, devices can be fabricated with fTbetween 4.0 and 7.0 GHz, while fmaxranges from 18.0 to 25.5 GHz. Noise figures range from 3.8 to 5.5 db at 4 GHz. Results will be presented from devices implanted with arsenio emitter energies from 27 to 30 KeV and boron base energies from 20 to 38 KeV. Boron base doses range from 5 \\times 10^{12} to 1013B/cm2, while emitter dose was 1 \\times 10^{15} to 2 \\times 10^{15} As/cm2. It was found that (QE/DE)effranged from 1.5 \\to 2.5 \\times 10^{13} cm-4sec for all emitter implants. A discussion of improvement of uniformity and yield is included along with some wafer yield data.
  • Keywords
    Annealing; Boron; Fabrication; Implants; Ion implantation; Metallization; Microwave devices; Microwave transistors; Noise figure; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1973 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1973.188736
  • Filename
    1477613
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553809