DocumentCode
3553840
Title
An inductive phase delay in the retarding field region of Schottky barrier BARITT diodes
Author
Oakes, J.G. ; Lee, C.A.
Author_Institution
Cornell University, Ithaca, New York
Volume
19
fYear
1973
fDate
1973
Firstpage
479
Lastpage
482
Abstract
A numerical integration of Poisson´s equation and the current equation is performed using the constant hole density at the Schottky barrier as a boundary condition. The resulting small-signal device admittances are in good agreement with experimentally observed values. Better negative conductance is predicted at low current densities when the phase shift near the Schottky barrier is included in the analysis.
Keywords
Boundary conditions; Delay; Doping; Equations; Frequency; Neodymium; Schottky barriers; Schottky diodes; Solids; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188764
Filename
1477641
Link To Document