• DocumentCode
    3553944
  • Title

    High-efficient graded-bandgap pGa1-xAlxAs-pGaAs-nGaAs solar cells

  • Author

    Konaga, M. ; Takahashi, K.

  • Author_Institution
    Tokyo Institute of Technology, Tokyo, JAPAN
  • Volume
    21
  • fYear
    1975
  • fDate
    1975
  • Firstpage
    95
  • Lastpage
    98
  • Abstract
    Graded-bandgap pGa1-xAlxAs-pGaAs-nGaAs solar cell structures are analyzed. Such cells allow conversion efficiencies higher than conventional GaAs cells due to the reduction of the surface recombination effect. It is advantageous to use pGaAs layers of 1 µm thickness, since the diffusion length for electrons is 3 to 5 times larger than that for holes. The theoretical conversion efficiency is calculated for AMO(6000K) blackbody radiation and typical parameters assumed. The efficiency strongly depends on the drift field E in the graded-bandgap layer, and the maximum efficiency approaches 20%.
  • Keywords
    Absorption; Boundary conditions; Circuits; Current density; Electron mobility; Electronics packaging; Energy conversion; Equations; Gallium arsenide; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1975 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1975.188833
  • Filename
    1478194
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553944