A microwave high voltage bipolar power transistor

During the last decade, an extensive amount of device development work has been done in low signal high frequency microwave transistors, and now these devices are commercially available from several manufacturers. However, high power microwave transistors have only recently been reported (1-4). This paper presents a high voltage microwave power transistor, which has been developed for instrument application at Tektronix, Inc. Some of the design considerations and performance data are reported. Contributing factors for the performance are indicated.