Fabrication and performance of ion implanted I2L devices

Integrated injection logic devices based on vertical NPN transistors and lateral PNP injectors, and fabricated using ion-implant doping exclusively are described. Two basic processes are outlined. One uses an implanted low-energy boron pre-deposited layer, thermally driven in, to form the NPN base and p⁺injectors. The other process uses high-energy implanted boron to form the active base region of the NPN device below the silicon surface. Both techniques use ion-implanted phosphorus for the n⁺collectors and collars. Results of speed-power measurements for a 7-stage ring oscillator and a 50-stage inverter string are described. The high-energy implanted boron process can be used together with Schottky-barrier collectors to further reduce the power-delay product.