DocumentCode
3554017
Title
Rigorous numerical analysis of a planar thyristor
Author
Anheier, Walter ; Engl, Walter L. ; Manck, Otto ; Wieder, Armin
Author_Institution
Institut für Theoretische Elektrotechnik, Technische Hochschule Aachen, Aachen, Germany
Volume
21
fYear
1975
fDate
1975
Firstpage
363
Lastpage
366
Abstract
A one-dimensional solution for the distribution of carriers and potential within a planar thyristor will be given. The analysis uses dimensions and physical data obtained from actual device structures. The simulation includes SRH- and Auger recombination mechanisms and Avalanche multiplication as well as mobility saturation effects. The relations between the various internal mechanisms and the different regions of the transfer characteristic are identified. This correlation is required for technological optimization of device performance.
Keywords
Anodes; Cathodes; Charge carrier processes; Doping profiles; Impurities; Numerical analysis; Poisson equations; Regions; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188899
Filename
1478260
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