Improved gate concept for light activated power thyristors

Light activated power thyristors require relatively high optical trigger power, which can be supplied by expended GaAs light emitters only. The dv/dt sensitivity is an essential limitation for the reduction of minimum trigger power. Optimizing of the emitter shunts and p-base sheet resistivity results in an already acceptable compromise. Better results are obtained by a gate structure which avoids dv/dt-triggering by internal compensation.