Device fabrication by molecular-beam epitaxy

Molecular beam epitaxy (MBE) has matured over the past three years to a point where useful microwave devices have been demonstrated and with some improvement there is potential for active optical devices. The GaAs hyperabrupt varactor, IMPATT diode, FET, mixer diode, and injection laser have been prepared with MBE. While GaAs layers can be prepared by MBE with electrical and optical properties comparable to those grown by liquid phase epitaxy (LPE), MBE also can be used to fabricate various structures that may be difficult by other growth methods.