• DocumentCode
    3554050
  • Title

    Very low threshold double heterojunction laser diodes of (AlGa)As

  • Author

    Ettenberg, M. ; Kressel, H.

  • Author_Institution
    RCA Laboratories, Princeton, New Jersey
  • Volume
    21
  • fYear
    1975
  • fDate
    1975
  • Firstpage
    487
  • Lastpage
    489
  • Abstract
    This paper describes the characteristics of double-heterojunction GaAs/(AlGa)As laser diodes with the lowest room temperature threshold current density (475 A/cm2) yet reported and a very small temperature sensitivity. The CW output from such lasers is only halved between 22 and 80°C at constant current.
  • Keywords
    DH-HEMTs; Diode lasers; Gallium arsenide; Heterojunctions; Radiative recombination; Temperature dependence; Temperature sensors; Thermal resistance; Threshold current; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1975 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1975.188929
  • Filename
    1478290
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554050