An integrated surface wave device using silicon MOSFETs and ZnO film transducers

This work demonstrates that useful signal processing devices can be obtained by combining the process of thin film piezoelectric transducer fabrication with large scale MOS integrated circuit technology. Increased amounts of signal processing capability should be obtainable on single chip structures by making greater use of LSI IC (integrated circuit) technology, and resultant cost savings and reliability improvements should be realizable over functionally comparable hybrid devices.