• DocumentCode
    3554149
  • Title

    Diode sources for 1.0 to 1.2 µm emission

  • Author

    Nuese, C.J.

  • Author_Institution
    RCA Laboratories, Princeton, New Jersey
  • fYear
    1976
  • fDate
    6-8 Dec. 1976
  • Firstpage
    125
  • Lastpage
    128
  • Abstract
    The properties of silica fibers that are potentially attractive for fiber-optic systems at wavelengths between about 1.0 and 1.2 µm are considered. The features and deficiencies of semiconductor LEDs and lasers that could be used in this wavelength range are then reviewed and compared. These sources include: Si-compensated LEDs of GaAs and InP; ternary homojunctions of (In,Ga)As, In(As,P), and Ga(As,Sb); "pseudo" III-Vs or II-VIs such as CuInSe2and CdSnP2; and heterojunction lasers and LEDs of (In,Ga)As/(In,Ga)P, Ga(As,Sb)/ (Al,Ga)(As,Sb), and (In,Ga)(As,P)/InP.
  • Keywords
    Fiber lasers; Gallium arsenide; Indium phosphide; Light emitting diodes; Optical attenuators; Optical fibers; Optical materials; Optical refraction; Optical variables control; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1976 International
  • Conference_Location
    Washigton, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1976.189000
  • Filename
    1478712
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554149