• DocumentCode
    3554158
  • Title

    Analysis of high-voltage switching transistors by a two-dimensional mathematical model

  • Author

    Gaur, Santosh P.

  • Author_Institution
    International Business Machines Corporation, Poughkeepsie, New York
  • Volume
    22
  • fYear
    1976
  • fDate
    1976
  • Firstpage
    158
  • Lastpage
    161
  • Abstract
    A two-dimensional mathematical model which includes the avalanche multiplication and internal self-heating effects has been used to predict the internal behavior of a typical high-voltage power transistor design. Collector n--n+interface is the region of high electrical and thermal stresses which cause second breakdown failure at high-current and high-voltage operating conditions.
  • Keywords
    Bipolar transistors; Breakdown voltage; Circuits; Current density; Electric breakdown; Mathematical model; Poisson equations; Power transistors; Temperature distribution; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1976 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1976.189008
  • Filename
    1478720
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554158