DocumentCode
3554189
Title
Thermosenstor - A new temperature-sensitive switching device
Author
Nakata, J. ; Sogo, T. ; Yamanaka, K. ; Kameda, T. ; Mihashi, Y.
Author_Institution
Mitsubishi Electric Corporation, Itami, Hyogo, Japan
fYear
1976
fDate
6-8 Dec. 1976
Firstpage
275
Lastpage
278
Abstract
A new type of temperature-sensitive switching device constructed with a p-n-p -n structure has been developed. This new device can be turned on by a predetermined temperature under the forward bias. This turn-on temperature can be shifted from 50°C to 150°C by connecting gate shunt resistance in parallel with emitter junction of the device. This device owes its features to the thyristor structure which gives contactless and latching switch, gate controlled operation and fast switching. However, several modifications have been made from conventional thyristor design in doping levels and dimensions for temperature-sensitive switching device. The structure, operation, characteristics the feature of the device are described.
Keywords
Contacts; Degradation; Doping; Joining processes; Leakage current; Switches; Temperature dependence; Temperature sensors; Thyristors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1976 International
Conference_Location
Washigton, DC, USA
Type
conf
DOI
10.1109/IEDM.1976.189037
Filename
1478749
Link To Document