Title :
Investigation of the sapphire-silicon interface by transient current analysis
Author :
Lehovec, K. ; Miller, Richard
Author_Institution :
University of Southern California, Los Angeles, California
Abstract :
Transient currents caused by an abrupt switch of the bias voltage applied to an MOS-capacitor on sapphire substrate are measured and analysed to obtain information on the Shockley-Read-Hall centers involved in the inversion charge build-up.
Keywords :
Charge carrier processes; Electrons; Entropy; Semiconductor films; Silicon; Steady-state; Substrates; Switches; Transient analysis; Voltage;
Conference_Titel :
Electron Devices Meeting, 1976 International
DOI :
10.1109/IEDM.1976.189039
