DocumentCode
3554206
Title
Surface characterization of ion-implanted Si -Si O2 structures
Author
Gray, P.V. ; Wang, K.L.
Author_Institution
General Electric Corporate Research and Development, Schenectady, New York
Volume
22
fYear
1976
fDate
1976
Firstpage
340
Lastpage
344
Abstract
This paper describes the results of calculations and experiments relating to silicon surface characteristics and how they are altered by implanted dopant layers. Properties considered are capacitance-voltage characteristics, doping profiling methods, MOSFET threshold and leakage values and noise levels.
Keywords
Annealing; Capacitance-voltage characteristics; Doping; Implants; Ion implantation; Leakage current; MOSFET circuits; Poisson equations; Research and development; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1976 International
Type
conf
DOI
10.1109/IEDM.1976.189052
Filename
1478764
Link To Document