• DocumentCode
    3554239
  • Title

    Thin film AlAs/GaAs on graphite solar cells

  • Author

    Johnston, W.D., Jr. ; Callahan, W.M.

  • Author_Institution
    Bell Telephone Laboratories, Inc., Holmdel, New Jersey
  • Volume
    22
  • fYear
    1976
  • fDate
    1976
  • Firstpage
    461
  • Lastpage
    464
  • Abstract
    We have prepared cells of polycrystalline N-AlAs on p-GaAs on graphite, with the III-V semiconductor layers grown by chloride transport vapor phase deposition. From the photocurrent response versus wavelength we infer electron diffusion lengths of 1.8 and 1.0 µm in the polycrystal GaAs at hole concentrations p ∼ 4 and 8 × 1018cm-3respectively. This indicates peak internal quantum efficiency exceeding 90%. External power efficiencies are limited by the large spreading resistance in the top AlAs layer due to poor majority carrier transfer across grain boundaries.
  • Keywords
    Boats; Gallium arsenide; Grain boundaries; Grain size; Inductors; Photovoltaic cells; Substrates; Temperature; Transistors; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1976 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1976.189083
  • Filename
    1478795
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554239