DocumentCode :
3554262
Title :
InSb CID infrared imaging devices
Author :
Kim, J.C. ; Davern, W.E. ; Colangelo, D.
Author_Institution :
General Electric Company, Syracuse, New York
Volume :
22
fYear :
1976
fDate :
1976
Firstpage :
550
Lastpage :
554
Abstract :
The development of the InSb MIS technology and associated CID imaging arrays has progressed rapidly. At present, high-sensitivity line arrays and operating two-dimensional arrays have been fabricated. Photon-noise-limited performance has been achieved in line arrays, all the noise sources of the device have been identified and modeled, and the results compare favorably with the theoretical values. For background photon flux levels higher than mid-1012photons/sec-cm2, the device performance is practically background limited (BLIP). In the lower background region at 77°K, however, the shot noise associated with the thermally generated dark current limits device sensitivity.
Keywords :
Area measurement; Background noise; Infrared imaging; Noise measurement; Optical imaging; Sampling methods; Semiconductor device noise; Sensor arrays; Shift registers; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1976 International
Type :
conf
DOI :
10.1109/IEDM.1976.189104
Filename :
1478816
Link To Document :
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