• DocumentCode
    3554262
  • Title

    InSb CID infrared imaging devices

  • Author

    Kim, J.C. ; Davern, W.E. ; Colangelo, D.

  • Author_Institution
    General Electric Company, Syracuse, New York
  • Volume
    22
  • fYear
    1976
  • fDate
    1976
  • Firstpage
    550
  • Lastpage
    554
  • Abstract
    The development of the InSb MIS technology and associated CID imaging arrays has progressed rapidly. At present, high-sensitivity line arrays and operating two-dimensional arrays have been fabricated. Photon-noise-limited performance has been achieved in line arrays, all the noise sources of the device have been identified and modeled, and the results compare favorably with the theoretical values. For background photon flux levels higher than mid-1012photons/sec-cm2, the device performance is practically background limited (BLIP). In the lower background region at 77°K, however, the shot noise associated with the thermally generated dark current limits device sensitivity.
  • Keywords
    Area measurement; Background noise; Infrared imaging; Noise measurement; Optical imaging; Sampling methods; Semiconductor device noise; Sensor arrays; Shift registers; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1976 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1976.189104
  • Filename
    1478816