Title :
Interaction of far-infrared radiation with hot two-dimensional holes in the quantum wells GaAs/Al/sub 1-x/Ga/sub x/As and Ge/Ge/sub 1-x/Si/sub x/
Author :
Aleshkin, Vladimir Ya ; Vorobjev, Leonid E. ; Donetsky, D.V. ; Dumelow, T. ; Kastalsky, A. ; Kuznetsov, O.A. ; Parker, T.J.
Author_Institution :
Inst. of Phys. of Microstructures, Acad. of Sci., Nizhny Novgorod, Russia
Abstract :
Summary form only given. The present work is a study of FIR emission from p-type GaAs-AlGaAs and Ge-GeSi structures caused by direct transitions of hot 2D holes between quantum-well subbands and modulation of FIR laser radiation under heating of 2D holes in quantum wells (QW). These phenomena were not observed before.
Keywords :
Ge-Si alloys; III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; germanium; hot carriers; infrared spectra; semiconductor quantum wells; 2D holes; FIR emission; FIR laser radiation modulation; GaAs-AlGaAs; GaAs/Al/sub 1-x/Ga/sub x/As; Ge-GeSi; Ge-GeSi structures; Ge/Ge/sub 1-x/Si/sub x/; direct transitions; far-infrared radiation; hot 2D holes; hot two-dimensional holes; p-type GaAs-AlGaAs; quantum wells; quantum-well subbands; Finite impulse response filter; Gallium arsenide; Gold; Heating; Laser excitation; Optical films; Probes; Reflectivity; Skin; Transistors;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
