• DocumentCode
    3554274
  • Title

    A metallization providing two levels of interconnect for beam leaded silicon integrated circuits

  • Author

    Ryden, W.D. ; Labuda, E.F. ; van Gelder, W.

  • Author_Institution
    Bell Telephone Laboratories, Allentown, Pennsylvania
  • Volume
    22
  • fYear
    1976
  • fDate
    1976
  • Firstpage
    597
  • Lastpage
    600
  • Abstract
    A two level metal structure is described for beam leaded silicon integrated circuits. The two level structure consists of a Ti-Pt first level, plasma deposited silicon nitride as interlevel dielectric, and Ti-Pt-Au as a second level. An example of the application of the structure to a bipolar LSI circuit is presented for the case of a 24 × 9 bit sequential access memory implemented with a Schottky I2L technology.
  • Keywords
    Conductors; Dielectrics; Integrated circuit interconnections; Integrated circuit metallization; Integrated circuit technology; Large scale integration; Plasma applications; Plasma temperature; Silicon; Telephony;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1976 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1976.189115
  • Filename
    1478827
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554274