Title :
Multi-gigabit/s digital multiplexing with EBS devices
Author_Institution :
Northrop Research and Technology Center, Hawthorne, California
Abstract :
Two design approaches are presented to an EBS signal processor that multiplexes multiple input data lines into a single output (parallel-to-serial conversion) with 2 Gbit/s serial output data rate. The first approach uses a CRT-type electron gun, eight input gates, and one silicon diode target. The second approach uses multiple electron sources, multiple input gates, and a single silicon diode target. A gating system is used to present to the target a 0.5-ns aperture time per electron gun. This approach is much less sensitive to misalignment and power supply and RF input drive instabilities than the first approach. In addition, higher output signal amplitudes and a smaller tube were achieved. Output pulse characteristics demonstrated at the 2 Gbit/s data rate are 5 to 7V pulse amplitude into 50Ω and less than 0.25 ns pulse risetime.
Keywords :
Apertures; Diodes; Electron beams; Electron sources; Multiplexing; Power supplies; Pulsed power supplies; Signal design; Signal processing; Silicon;
Conference_Titel :
Electron Devices Meeting, 1976 International
DOI :
10.1109/IEDM.1976.189133