The effects of processing on radiation damage in SiO2

This paper reviews the general interaction of radiation with thermally grown SiO2, both phenomenologically and atomistically. Radiation induced trapped charge, the creation of fast surface states and the all-important neutral electron traps are individually discussed. The types of radiation and their concomitant damage produced by the typical processes of ion implantation, reactive ion etching and E-Beam lithography are outlined. The effect of these processes on the oxidized silicon system is treated and process modification to minimize radiation damage is discussed.