DocumentCode
3554396
Title
Comparison of MOS-gate protection networks
Author
Six, Paul ; Sansen, Willy ; Maes, Herman
Author_Institution
Kath. Univ. Leuven, HEVERLEE, Belgium
Volume
23
fYear
1977
fDate
1977
Firstpage
159
Lastpage
161
Abstract
Field-plated diodes, Punch-Through and Reach-Through devices and a new kind of Implanted Zener Diode have been studied with regard to their current sinking capability for use as protection devices of MOST gates. All conventionaly used protections show some drawbacks. The Implanted Zener Diodes feature a tightly controlled breakdown voltage, low dynamic resistance and no walk-out effects.
Keywords
Diodes; Electrical resistance measurement; Integrated circuit layout; Integrated circuit measurements; MOSFETs; Protection; Secondary generated hot electron injection; Substrate hot electron injection; Time measurement; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1977 International
Type
conf
DOI
10.1109/IEDM.1977.189192
Filename
1479272
Link To Document