DocumentCode :
3554409
Title :
Femto-Joule, high-speed planar GaAs E-JFET logic
Author :
Zuleeg, R. ; Notthoff, J.K. ; Friebertshauser, P.E. ; Troeger, G.L.
Author_Institution :
McDonnell Douglas Astronautics Company, Huntington Beach, California, USA
Volume :
23
fYear :
1977
fDate :
1977
Firstpage :
198
Lastpage :
200
Abstract :
Selective ion implantation was utilized to fabricate planar integrated circuits with GaAs enhancement-mode junction field-effect transistors (=E-JFET). A nine-stage ring oscillator was fabricated and served as a test vehicle for assessing the speed-power product for digital applications. Correlation of experimental results with theoretical predictions revealed femto-Joule switching characteristics of short-channel devices with LSI capability. The GaAs depletion-mode metal semiconductor field-effect transistor (=D-MESFET) logic gate performance and IC capability were compared with those of the E-JFET.
Keywords :
FETs; Fabrication; Gallium arsenide; Intrusion detection; Ion implantation; JFET integrated circuits; Large scale integration; Logic devices; Ring oscillators; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1977 International
Type :
conf
DOI :
10.1109/IEDM.1977.189204
Filename :
1479284
Link To Document :
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