Femto-Joule, high-speed planar GaAs E-JFET logic

Selective ion implantation was utilized to fabricate planar integrated circuits with GaAs enhancement-mode junction field-effect transistors (=E-JFET). A nine-stage ring oscillator was fabricated and served as a test vehicle for assessing the speed-power product for digital applications. Correlation of experimental results with theoretical predictions revealed femto-Joule switching characteristics of short-channel devices with LSI capability. The GaAs depletion-mode metal semiconductor field-effect transistor (=D-MESFET) logic gate performance and IC capability were compared with those of the E-JFET.