Temperature dependence of In-doped silicon strain gages

Author

Tamim, Hany R. ; Estrada, Horacio V.

Author_Institution

North Carolina Univ., Charlotte, NC, USA

fYear

1991

fDate

7-10 Apr 1991

Firstpage

1101

Abstract

An alternative method for the doping of silicon so as to reduce the temperature coefficient of the silicon´s resistivity (TCR) is reported. The method is based on the use of indium (a deep-level acceptor impurity) as a primary dopant and B, Al, or Ga (shallow-level acceptors). Alternatively, it is shown that a parallel array of two strain gauges can also lead to a significant TCR. Preliminary experimental results indicate that the TCR can be reduced by at least one order of magnitude, within a temperature range of 100°C. Theoretical calculations indicate that this coefficient can be as low as 10 ppm/°C

Keywords

electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; indium; semiconductor doping; silicon; strain gauges; 200 to 700 K; Si:In,Al; Si:In,B; Si:In,Ga; TCR; deep-level acceptor impurity; doping; parallel array; shallow-level acceptors; strain gages; temperature coefficient of resistivity; Actuators; Capacitive sensors; Conductivity; Mechanical sensors; Mechanical variables measurement; Silicon; Strain measurement; Temperature dependence; Temperature sensors; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Southeastcon '91., IEEE Proceedings of

Conference_Location

Williamsburg, VA

Print_ISBN

0-7803-0033-5

Type

conf

DOI

10.1109/SECON.1991.147934

Filename

147934