Improved performance of GaAs microwave field-effect transistors with via-connections through the substrate

Via-connections to source electrodes through the substrate of GaAs Schottky barrier MESFETs have been fabricated in a reproducible manner by means of etching, electroless gold plating, and electroplating. The short gold-plated source connections reduce the common-lead parasitic source inductance by a large factor, resulting in gain increases of 2 db at 4 GHz. At higher frequencies, the improvement over conventionally bonded transistors would become more pronounced.