• DocumentCode
    3554487
  • Title

    Safe method of designing of power transistors circuits with forward second breakdown taken into consideration

  • Author

    Pióro, Zbigniew

  • Author_Institution
    Warsaw Technical University, Warsaw, Poland
  • Volume
    23
  • fYear
    1977
  • fDate
    1977
  • Firstpage
    420
  • Lastpage
    422
  • Abstract
    In this paper the results of studies of second breakdown phenomenon in bipolar transistors are presented. Along with this a new feature of second breakdown phenomenon and new method of designing of electronic power circuits based on this feature is discussed.
  • Keywords
    Circuit testing; Delay effects; Design methodology; Electric breakdown; Power transistors; Pulse circuits; Pulse shaping methods; Shape; Space vector pulse width modulation; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1977 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1977.189276
  • Filename
    1479356
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554487