DocumentCode
3554507
Title
Temperature-sensitive switching device thermosenstor
Author
Nakata, J. ; Sogo, T. ; Yamanaka, K. ; Mihashi, Y. ; Shirahata, K.
Author_Institution
Mitsubishi Electric Corporation, Itami, Japan
Volume
23
fYear
1977
fDate
1977
Firstpage
477
Lastpage
480
Abstract
A p-n-p-n temperature-sensitive switching device "Thermosenstor" operatable in the temperature range of -30°C to 150°C has been developed by implanting argon ion to the collector junction of the p-n-p-n structure. Argon ion implantation also permits the device to be less sensitive to the dV/dt triggering as well as to eliminate the on-off switching temperature differential. The construction, characteristics and reliability are described.
Keywords
Argon; Ion implantation; Lattices; Leakage current; P-n junctions; Silicon; Temperature dependence; Temperature sensors; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1977 International
Type
conf
DOI
10.1109/IEDM.1977.189294
Filename
1479374
Link To Document