J-band performance of 300 nm gate length GaAs FETs

Author

Butli, R.S. ; Hughes, A.J. ; Bennett, R.H. ; Parker, D. ; Turner, J.A. ; Turner, J.A.

Author_Institution

Plessey Research Ltd., Northamptonshire, U. K.

Volume

fYear

1978

fDate

1978

Firstpage

136

Lastpage

139

Abstract

Present noise theories

Keywords

Bonding; Equations; FETs; Frequency; Gallium arsenide; Metallization; Noise figure; Parasitic capacitance; Resists; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1978 International

Type

DOI

10.1109/IEDM.1978.189371

Filename

1479796

Link To Document