30 - 40 GHz GaAs insulated gate field effect transistors

This paper is demonstrating the feasibility of using the native oxide film on GaAs surface grown by anodic oxidation in oxygen plasma as the gate insulator of GaAs insulated gate field effect transistor (IGFET). Especially the possibility of applying photolithography to the fabrication of IGFETs with this oxide was explored and it was assured by using dry etching process. IGFETs with the gate of 1µm length were fabricated. The high frequency performance is exemplified by the maximum stable power gain of 11.7dB at 8GHz and by the cut-off frequency of the unilateral power gain of 43GHz.