DocumentCode
3554641
Title
The performance of GaAs logic gates in LSI
Author
Solomon, P.M.
Author_Institution
IBM T.J. Watson Research Center, Yorktown Heights, NY
Volume
24
fYear
1978
fDate
1978
Firstpage
201
Lastpage
204
Abstract
This paper examines the theoretical performance of GaAs MESFET logic gates and attempts to obtain a realistic comparison of GaAs vs Si devices under typical loading conditions imposed by large random logic arrays. GaAs was found to have a speed advantage of 3-6 over Si, depending on the operating voltage. Normally off type MESFET devices were attractive at gate lengths of 0.5µm, giving loaded delays of 105ps. Logic swings were 600mV requiring a threshold voltage control of ±50mV.
Keywords
Chemical industry; Chemical technology; Delay; Gallium arsenide; Large scale integration; Logic arrays; Logic devices; Logic gates; MESFET circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1978 International
Type
conf
DOI
10.1109/IEDM.1978.189387
Filename
1479812
Link To Document