Polymer semiconductor solar cells

We report the first solar cell whose junction is formed by a polymer-semiconductor interface. Open circuit voltages, Voc> 0.7 V have been observed on cells consisting of a thin film of polymeric sulfur-nitride, (SN)x, deposited on GaAs. This is an enhancement of more than 40% over the Voccommonly measured with metal-GaAs solar cells. Initial efforts have resulted in efficiencies >6% without antireflection coatings. Similar enhancements in Vocare observed in (SN)x-silicon solar cells. The doped polymer (SNBr0.4)xhas a higher conductivity and greater transmission of the solar spectrum than (SN)x. The implications of (SNBr0.4)xto both single crystal and polycrystalline GaAs solar cells will be discussed.