DocumentCode
3554677
Title
The SIS tunnel emitter
Author
de Graaff, H.C. ; de Groot, J G
Author_Institution
Philips Research Laboratories, Eindhoven, The Netherlands
Volume
24
fYear
1978
fDate
1978
Firstpage
333
Lastpage
335
Abstract
Silicon npn transistors with emitters consisting of a polycrystalline and a monocrystalline region with a thin (20-60 Å) interfacial layer in between have a high efficiency and a current gain with low positive or even negative temperature coefficient. This paper proposes a model based on tunneling through and band bending at the interfacial layer. The tunnel probability turns out to be 10-2to 10-3, the barrier height is about 100 mV and the band bending some 40 to 90 mV.
Keywords
Conducting materials; Crystalline materials; Crystallization; Laboratories; Photonic band gap; Silicon; Temperature distribution; Thickness measurement; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1978 International
Type
conf
DOI
10.1109/IEDM.1978.189421
Filename
1479846
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