DocumentCode
3554685
Title
A 2K × 8-bit static RAM
Author
Ohzone, T. ; Hirao, Takami ; Tsuji, Keita ; Horiuchi, S. ; Takayanagi, S.
Author_Institution
Matsushita Electric Industrial Co. Ltd., Osaka, Japan
fYear
1978
fDate
4-6 Dec. 1978
Firstpage
360
Lastpage
363
Abstract
High density 2K×8-bit fully static RAM has been developed. Memory cell size of 23×27µm results in the chip size of 3.75×4.19mm, which is nearly equal to that of existing 4K-bit static RAM´s. High packing density is realized by layout of 3µm photolithography and double-level polysilicon process permitting fabrication of memory load resistors upon driver MOSFET´s.
Keywords
Circuits; Fabrication; Flip-flops; Power dissipation; Random access memory; Read-write memory; Resistors; Silicon; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1978 International
Conference_Location
Washigton, DC, USA
Type
conf
DOI
10.1109/IEDM.1978.189428
Filename
1479853
Link To Document