DocumentCode
3554690
Title
Design criteria for GaAs MESFETs related to stationary high field domains
Author
Shur, M.S. ; Eastman, L.F. ; Judraprawira, S. ; Gammel, J. ; Tiwari, J.
Author_Institution
Oakland University, Rochester, MI
Volume
24
fYear
1978
fDate
1978
Firstpage
381
Lastpage
384
Abstract
An experimental evidence of the Gunn domain formation at the drain side of the gate based on the studies of the photoconductivity response of GaAs MESFETs is presented. A new set of design critera based on the modified theory of high-field domains is derived and optimum device parameters are estimated.
Keywords
Breakdown voltage; Current-voltage characteristics; Electron mobility; Gallium arsenide; Gunn devices; Laser beams; MESFETs; Optical saturation; Parameter estimation; Photoconductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1978 International
Type
conf
DOI
10.1109/IEDM.1978.189433
Filename
1479858
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