The temperature effect on sequential resonant tunneling in single bound state multiple-quantum-well structure

Author

Yuanjian Xu ; Shakouri, Ali ; Yariv, Amnon

Author_Institution

Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA

fYear

1996

fDate

7-7 June 1996

Firstpage

99

Lastpage

100

Abstract

Summary form only given. The nonuniform electric field distribution in voltage-biased multiple-quantum-well (MQW) structure resulting from sequential resonant tunneling (SRT) causes discontinuity in the current-voltage characteristics, and is a mainly low temperature effect. In this talk we discuss the temperature dependence of SRT and the electric field distribution in GaAs MQWs.

Keywords

electro-optical effects; gallium arsenide; semiconductor quantum wells; tunnelling; GaAs; GaAs MQWs; current-voltage characteristics; electric field distribution; low temperature effect; multiple-quantum-well structure; nonuniform electric field distribution; sequential resonant tunneling; single bound state; temperature dependence; temperature effect; voltage-biased multiple-quantum-well structure; Autocorrelation; Laser transitions; Laser tuning; Pulse measurements; Quantum well devices; Resonance; Resonant tunneling devices; Solids; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865621