DocumentCode
3554707
Title
Plasma reactor - A complete IC factory?
Author
Reinberg, A.R.
Author_Institution
Texas Instruments, Incorporated, Dallas, TX
fYear
1978
fDate
4-6 Dec. 1978
Firstpage
441
Lastpage
443
Abstract
Parallel plate (planar) plasma reactors have been demonstrated to be capable of performing all of the material removal processes necessary for fabricating integrated circuits. Coupled with the recognized high quality of plasma deposited dielectric films for masking, insulation, and passivation applications, the "one machine" IC factory becomes an intriguing possibility. In this paper we will trace a typical IC process flow from mask making to final packaging. Real world results and problems will be stressed in connection with cleaning, oxidation, composition, uniformity and step coverage in film deposition, edge definition, selectivity, undercutting and side effects in etching. Process control requirements and the necessity of coupling new process specifications into product design at the earliest stages will be discussed. Speculation on future developments will also be presented.
Keywords
Application specific integrated circuits; Coupling circuits; Dielectric films; Dielectric materials; Dielectrics and electrical insulation; Inductors; Passivation; Plasma applications; Plasma materials processing; Production facilities;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1978 International
Conference_Location
Washigton, DC, USA
Type
conf
DOI
10.1109/IEDM.1978.189449
Filename
1479874
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