DocumentCode
3554726
Title
Hybrid InSb focal plane array fabrication
Author
Hoendervoogt, R.M. ; Kormos, K.A. ; Rosbeck, J.P. ; Toman, J.R. ; Burgett, C.B.
Author_Institution
Santa Barbara Research Center, Goleta, California
Volume
24
fYear
1978
fDate
1978
Firstpage
510
Lastpage
512
Abstract
Large two-dimensional photovoltaic infrared detector arrays have been produced using the hybrid combination of InSb coupled to a silicon CCD. The hybridization process uses indium interconnect pads, which electrically couple each InSb photodiode to a CCD input structure. The entire InSb array is optically thin to allow the backside illumination of the InSb for high packing density. This process is also applicable to other intrinsic detector materials, such as InGaSb and HgCdTe. Production of 32 × 32 mosaic arrays with elements on 4-mil centers has demonstrated high interconnect yield and reliability. Fabrication of larger 58 × 62 arrays of similar design is progressing.
Keywords
Charge coupled devices; Couplings; Indium; Infrared detectors; Optical arrays; Optical device fabrication; Photovoltaic systems; Sensor arrays; Silicon; Solar power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1978 International
Type
conf
DOI
10.1109/IEDM.1978.189466
Filename
1479891
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