• DocumentCode
    3554726
  • Title

    Hybrid InSb focal plane array fabrication

  • Author

    Hoendervoogt, R.M. ; Kormos, K.A. ; Rosbeck, J.P. ; Toman, J.R. ; Burgett, C.B.

  • Author_Institution
    Santa Barbara Research Center, Goleta, California
  • Volume
    24
  • fYear
    1978
  • fDate
    1978
  • Firstpage
    510
  • Lastpage
    512
  • Abstract
    Large two-dimensional photovoltaic infrared detector arrays have been produced using the hybrid combination of InSb coupled to a silicon CCD. The hybridization process uses indium interconnect pads, which electrically couple each InSb photodiode to a CCD input structure. The entire InSb array is optically thin to allow the backside illumination of the InSb for high packing density. This process is also applicable to other intrinsic detector materials, such as InGaSb and HgCdTe. Production of 32 × 32 mosaic arrays with elements on 4-mil centers has demonstrated high interconnect yield and reliability. Fabrication of larger 58 × 62 arrays of similar design is progressing.
  • Keywords
    Charge coupled devices; Couplings; Indium; Infrared detectors; Optical arrays; Optical device fabrication; Photovoltaic systems; Sensor arrays; Silicon; Solar power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1978 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1978.189466
  • Filename
    1479891