DocumentCode
3554744
Title
The impact of ion implantation on VLSI
Author
Ryssel, Heiner
Author_Institution
Institut für Festkörpertechnologie, München, Germany
Volume
24
fYear
1978
fDate
1978
Firstpage
583
Lastpage
587
Abstract
In this paper problems concerned with the application of ion implantation to VLSI technology are discussed. The problems discussed involve segregation, oxidation, diffusion, lateral spread, and as new applications of ion implantation gettering, local oxidation, buried layers, damage etching, and beam writing.
Keywords
Bipolar transistors; Etching; Gettering; Ion implantation; Large-scale systems; MOSFETs; Oxidation; Temperature; Very large scale integration; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1978 International
Type
conf
DOI
10.1109/IEDM.1978.189483
Filename
1479908
Link To Document