• DocumentCode
    3554772
  • Title

    Bipolar mode static induction transistor (BSIT) - High speed switching device

  • Author

    Nishizawa, J. ; Ohmi, Tadahiro ; Mochida, Y. ; Matsuyama, Takashi ; Iida, S.

  • Author_Institution
    Tohoku University, Sendai, Japan
  • fYear
    1978
  • fDate
    4-6 Dec. 1978
  • Firstpage
    676
  • Lastpage
    679
  • Abstract
    Junction type static induction transistor is designed as normally-off device, called as bipolar mode static induction transistor (BSIT), where the channel is completely pinched off by the gate to channel built-in voltage, resulting in an appearance of potential barrier in the channel. Basic properties of BSIT are discussed theoretically and experimentally. Possibilities of high current and high speed switching performance of BSIT has been demonstrated experimentally by using the sample having a cell size of 800 × 520 µm2mounted in a high frequency package.
  • Keywords
    Capacitance; Communication switching; Current-voltage characteristics; FETs; Frequency; Impurities; Packaging; Temperature; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1978 International
  • Conference_Location
    Washigton, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1978.189509
  • Filename
    1479934
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554772