DocumentCode
355479
Title
Three-beam four-wave mixing on GaAs using 15-fs pulses
Author
Wehner, M.U. ; Steinbach, Daniel ; Wegener, Martin
Author_Institution
Inst. fur Angewandte Phys., Karlsruhe Univ., Germany
fYear
1996
fDate
7-7 June 1996
Firstpage
107
Lastpage
108
Abstract
Summary form only given. Two-beam four-wave mixing (FWM) experiments on bulk GaAs at low temperatures using pulses of 15 fs in duration have recently revealed two observations: i) non-Markovian relaxation resulting from exciton-LO-phonon interaction at intermediate carrier densities and ii) an apparent contradiction between the observed decay in the time delay domain and the FWM-linewidth at low densities.
Keywords
III-V semiconductors; excitons; gallium arsenide; high-speed optical techniques; multiwave mixing; phonon-exciton interactions; 15 fs; FWM-linewidth; GaAs; bulk GaAs; exciton-LO-phonon interaction; fs pulses; intermediate carrier densities; low densities; low temperatures; nonMarkovian relaxation; observed decay; three-beam four-wave mixing; time delay domain; Delay effects; Diffraction; Excitons; Four-wave mixing; Gallium arsenide; Laser excitation; Optical pulses; Polarization; Quantum well lasers; Resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-444-0
Type
conf
Filename
865630
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